Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3

RS-stocknr.:: 653-188
Fabrikantnummer:: SQS201CENW-T1_GE3
Fabrikant:: Vishay

Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 1.446,00

(excl. BTW)

€ 1.749,00

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,482	€ 1.446,00

*prijsindicatie

RS-stocknr.:: 653-188
Fabrikantnummer:: SQS201CENW-T1_GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type P
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	-16A
	Maximum Drain Source Voltage Vds	-100V
	Package Type	PowerPAK
	Series	SQS201CENW
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0800Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.1V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Typical Gate Charge Qg @ Vgs	26nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Length	3.30mm
	Height	0.41mm
	Width	3.30mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type P
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id -16A
	Maximum Drain Source Voltage Vds -100V
	Package Type PowerPAK
	Series SQS201CENW
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0800Ω
	Channel Mode Enhancement
	Forward Voltage Vf -1.1V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Typical Gate Charge Qg @ Vgs 26nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Length 3.30mm
	Height 0.41mm
	Width 3.30mm
	Automotive Standard AEC-Q101

Datasheet - SQS201CENW-T1_GE3

Land van herkomst:: CN

Vishay SQS201CENW Series Single MOSFETs, -100V Maximum Drain Source Voltage, -16A Maximum Continuous Drain Current - SQS201CENW-T1_GE3

This single MOSFET is a P-channel enhancement device intended for power-switching functions in electronic systems, particularly where automotive-grade robustness is required. It is designed for PCB mounting in a PowerPAK package and offers a balance of current handling and voltage capability suited to demanding industrial and vehicular control environments.

Features and Benefits:

• P-channel device enabling high-side switching in circuits • 100V drain-to-source rating allowing large voltage margins • -16A continuous drain current for substantial load capability • 0.08Ω Rds(on) minimising conduction losses under load • 26nC typical gate charge supporting moderate switching speeds • 62.5W power dissipation handling significant thermal stress

Applications

• Suitable for high-side power switching in automotive modules • Ideal for motor-drive protection and control circuits • Used for battery management and power distribution systems • Can be used for industrial automation logic-level power stages

What gate voltage limits should be observed during design?

The gate-to-source excursion must not exceed 20V to prevent device stress.

How does the device behave at temperature extremes in practice?

It is specified to operate from -55°C up to 175°C, enabling use in harsh thermal environments without exceeding its rated limits.

What package considerations affect PCB layout and cooling?

The PowerPAK 8-pin footprint influences thermal conduction paths and requires adequate PCB copper for heat dissipation to make use of the 62.5W power-handling capacity.

Are there specific standards influencing selection for automotive use?

It meets the AEC‑Q101 automotive qualification, indicating suitability for vehicle electronic applications under that standard.