Vishay SQ3419CEV Type P-Channel Single MOSFETs, -6.9 A, -40 V Enhancement, 6-Pin TSOP-6 SQ3419CEV-T1_GE3

RS-stocknr.:: 653-161
Fabrikantnummer:: SQ3419CEV-T1_GE3
Fabrikant:: Vishay

Vishay SQ3419CEV Type P-Channel Single MOSFETs, -6.9 A, -40 V Enhancement, 6-Pin TSOP-6 SQ3419CEV-T1_GE3

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Vishay SQ3419CEV Type P-Channel Single MOSFETs, -6.9 A, -40 V Enhancement, 6-Pin TSOP-6

RS-stocknr.: 653-162

1 tape1

€ 0,53

(excl. BTW)

€ 0,64

(incl. BTW)

RS-stocknr.:: 653-161
Fabrikantnummer:: SQ3419CEV-T1_GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-6.9A
	Maximum Drain Source Voltage Vds	-40V
	Series	SQ3419CEV
	Package Type	TSOP-6
	Mount Type	PCB
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.092Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11.3nC
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	5W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Width	2.98mm
	Length	3.10mm
	Height	1.1mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Continuous Drain Current Id -6.9A
	Maximum Drain Source Voltage Vds -40V
	Series SQ3419CEV
	Package Type TSOP-6
	Mount Type PCB
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.092Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11.3nC
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 5W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Width 2.98mm
	Length 3.10mm
	Height 1.1mm
	Automotive Standard AEC-Q101

Datasheet - SQ3419CEV-T1_GE3

Vishay SQ3419CEV Series Single MOSFETs, 5W Maximum Power Dissipation, -40V Maximum Drain Source Voltage - SQ3419CEV-T1_GE3

This single MOSFETs device is a P‑channel enhancement‑mode power transistor designed for PCB mounting in electronic systems requiring controlled high‑side switching and power management. It operates across a broad temperature range and meets automotive qualification standards, making it suitable for demanding environments where compact packaged MOSFETs are required.

Features and Benefits:

• 40V drain‑source rating enabling robust high‑side switching
• 6.9A continuous drain current supporting moderate load currents
• 0.092Ω maximum Rds(on) reducing conduction losses
• 11.3nC typical gate charge allowing faster gate transitions
• 5W maximum power dissipation handling thermal stress during operation
• AEC‑Q101 qualification providing suitability for automotive electronics

Applications

• Suitable for high‑side switching in vehicle control modules
• Ideal for power distribution in compact motor drivers
• Used with battery management systems for protection switching
• Can be used for DC‑DC converter P‑channel stages
• Suitable for compact PCB power control in industrial modules

What package is used and how does it benefit PCB layout?

It uses a TSOP‑6 package which offers a low profile and multiple pins for thermal and electrical connection, simplifying PCB routing in space‑constrained designs.

What gate voltage limits should designers observe?

The gate‑to‑source voltage must not exceed ±20V to avoid gate oxide stress and ensure long‑term reliability.

How does the device perform in high‑temperature environments?

The device is rated to operate from -55°C up to 175°C, allowing use in applications with wide thermal excursions.

What pin count and mounting style are specified?

It has six pins and is intended for PCB mounting to facilitate integration into standard board assemblies.