Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3

RS-stocknr.:: 653-103
Fabrikantnummer:: SISS32LDN-T1-BE3
Fabrikant:: Vishay

Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3

Subtotaal (1 rol van 3000 eenheden)*

€ 1.986,00

(excl. BTW)

€ 2.403,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Laatste voorraad RS

Laatste 6.000 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,662	€ 1.986,00

*prijsindicatie

RS-stocknr.:: 653-103
Fabrikantnummer:: SISS32LDN-T1-BE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	63A
	Maximum Drain Source Voltage Vds	80V
	Series	SISS32LDN
	Package Type	PowerPAK
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0072Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	65.7W
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	17.7nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Width	3.3mm
	Standards/Approvals	RoHS
	Height	0.75mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 63A
	Maximum Drain Source Voltage Vds 80V
	Series SISS32LDN
	Package Type PowerPAK
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0072Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 65.7W
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 17.7nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Width 3.3mm
	Standards/Approvals RoHS
	Height 0.75mm
	Automotive Standard No

Datasheet - SISS32LDN-T1-BE3

Land van herkomst:: TH

Vishay SISS32LDN Series Single MOSFETs, 80V Maximum Drain Source Voltage, 63A Maximum Continuous Drain Current - SISS32LDN-T1-BE3

This single MOSFET is a compact N-channel enhancement device designed for high-current switching in surface-mount applications. It operates across a wide temperature range and is intended for use where efficient conduction and robust voltage handling are required. The device is suitable for power conversion and switching stages in electronic systems that demand low conduction losses and moderate switching energy.

Features and Benefits:

• Very low Rds(on) 0.0072Ω reduces conduction losses under load
• 80V drain-source rating supports high-voltage switching tasks
• Continuous drain current 63A enables substantial load handling
• Maximum power dissipation 65.7W allows sustained thermal performance
• Gate charge 17.7nC facilitates predictable switching behaviour
• Forward voltage 1.1V minimises drop during conduction

Applications

• Suitable for 80V DC-DC converter switching stages
• Ideal for high-current synchronous rectification designs
• Used with power trains in industrial motor controllers
• Can be used for load switching in server power supplies
• Suitable for compact SMD power modules and assemblies

What mounting style does it require for assembly?

It is supplied in a PowerPAK surface-mount package intended for reflow soldering onto PCB land patterns.

How does it perform thermally at elevated temperatures?

The device is specified to operate up to 150°C junction temperature, enabling use in thermally demanding environments when appropriate thermal management is applied.

What gate voltage limits should be observed during drive?

The maximum gate-to-source voltage is 20V, so gate-drive circuitry should remain within this limit to avoid device stress.

Is it suitable for automotive-qualified designs?

It is not classified as an automotive-standard device

designers should assess qualification needs against system requirements.