Vishay EF Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK
- RS-stocknr.:
- 653-078
- Fabrikantnummer:
- SIHR100N60EF-T1GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 rol van 1 eenheid)*
€ 6,72
(excl. BTW)
€ 8,13
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2.000 stuk(s) vanaf 18 maart 2026
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Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 6,72 |
| 10 - 49 | € 6,53 |
| 50 - 99 | € 6,31 |
| 100 + | € 5,45 |
*prijsindicatie
- RS-stocknr.:
- 653-078
- Fabrikantnummer:
- SIHR100N60EF-T1GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.108Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 347W | |
| Maximum Operating Temperature | 150°C | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.108Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 347W | ||
Maximum Operating Temperature 150°C | ||
Width 8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay 4th generation E Series Power MOSFET equipped with a fast body diode for enhanced switching efficiency. It offers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Packaged in PowerPAK 8x8LR, it's Ideal for server, telecom, lighting, industrial, and solar power applications.
Pb Free
Halogen free
RoHS compliant
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