Microchip Two Pairs of N and P Channel TC8220 1 P-Channel, N channel-Channel MOSFET Arrays, 2.3 A, 200 V Enhancement,
- RS-stocknr.:
- 598-776
- Fabrikantnummer:
- TC8220K6-G
- Fabrikant:
- Microchip
Subtotaal (1 rol van 3300 eenheden)*
€ 10.622,70
(excl. BTW)
€ 12.853,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Verzending vanaf 11 maart 2026
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3300 + | € 3,219 | € 10.622,70 |
*prijsindicatie
- RS-stocknr.:
- 598-776
- Fabrikantnummer:
- TC8220K6-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | P-Channel, N channel | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TC8220 | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Transistor Configuration | Two Pairs of N and P Channel | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Height | 1mm | |
| Length | 4mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type P-Channel, N channel | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TC8220 | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Transistor Configuration Two Pairs of N and P Channel | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Height 1mm | ||
Length 4mm | ||
Width 4 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure along with Supertex’s proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors, while also providing the high input impedance and positive temperature coefficient typical of MOS devices.
Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds
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