Infineon HEXFET Type N-Channel MOSFET, 160 A, 30 V Enhancement, 3-Pin IPAK IRLU8743PBF
- RS-stocknr.:
- 495-760
- Artikelnummer Distrelec:
- 304-29-640
- Fabrikantnummer:
- IRLU8743PBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 5,59
(excl. BTW)
€ 6,765
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- 135 resterend, klaar voor verzending
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,118 | € 5,59 |
| 50 - 120 | € 1,01 | € 5,05 |
| 125 - 245 | € 0,94 | € 4,70 |
| 250 - 495 | € 0,872 | € 4,36 |
| 500 + | € 0,806 | € 4,03 |
*prijsindicatie
- RS-stocknr.:
- 495-760
- Artikelnummer Distrelec:
- 304-29-640
- Fabrikantnummer:
- IRLU8743PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | IPAK | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 135W | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Width | 2.39 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type IPAK | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 135W | ||
Maximum Operating Temperature 175°C | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Width 2.39 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLU8743PBF
This MOSFET is an enhancement mode device designed for efficient switching applications. It utilises Advanced technology to perform well in high-frequency operations, making it suitable for power management in various industrial scenarios. With impressive specifications, it effectively manages significant current loads while maintaining low resistance, ensuring performance in various conditions.
Features & Benefits
• Low on-resistance reduces power loss during operation
• High continuous drain current of 160A supports substantial loads
• Voltage range up to 30V facilitates diverse applications
• Designed with an IPAK TO-251 package for straightforward installation
• Fully characterised avalanche capabilities enhance operational reliability
Applications
• High-frequency synchronous buck converters
• Isolated DC-DC converters in industrial environments
• Computer processor power management systems
• High current power supply
How does it perform in high-temperature environments?
The device operates within a temperature range of -55°C to +175°C, ensuring consistent performance in extreme conditions.
What is the significance of low RDS(on) for my design?
A low RDS(on) Value minimises conduction losses, promoting efficient energy use and effective thermal management, which is essential for high-current applications.
Can it be used in Pulse applications?
Yes, its design supports pulsed current handling, making it suitable for various applications requiring transient response.
What factors should I consider during installation?
It is important to ensure proper thermal management and verify compatibility with the circuit's voltage and current specifications to optimise performance.
Is there a need for additional components for gate control?
Incorporating gate drive circuits may be advantageous to enhance switching performance, especially in high-frequency applications.
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