STMicroelectronics SCT MOSFET, 55 A, 1200 V H2PAK-7 SCT025H120G3-7

Bekijk alle MOSFETs

Subtotaal (1 rol van 1000 eenheden)*

€ 20.488,00

(excl. BTW)

€ 24.790,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 07 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
1000 +€ 20,488€ 20.488,00

*prijsindicatie

RS-stocknr.:
365-165
Fabrikantnummer:
SCT025H120G3-7
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

H2PAK-7

Mount Type

Surface

Maximum Drain Source Resistance Rds

27mΩ

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

Land van herkomst:
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

Gerelateerde Links