Infineon AIMZA75 Type N-Channel MOSFET, 163 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R008M1HXKSA1
- RS-stocknr.:
- 351-988
- Fabrikantnummer:
- AIMZA75R008M1HXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 55,14
(excl. BTW)
€ 66,72
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Verzending vanaf 14 juni 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 55,14 |
| 10 - 99 | € 49,63 |
| 100 + | € 45,78 |
*prijsindicatie
- RS-stocknr.:
- 351-988
- Fabrikantnummer:
- AIMZA75R008M1HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 163A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | AIMZA75 | |
| Package Type | PG-TO247-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 14.0mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.3V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 517W | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 21.1mm | |
| Standards/Approvals | AEC Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 163A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series AIMZA75 | ||
Package Type PG-TO247-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 14.0mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.3V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 517W | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 21.1mm | ||
Standards/Approvals AEC Q101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC Automotive MOSFET is built over the solid silicon carbide technology. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Superior efficiency in hard switching
Enables higher switching frequency
Higher reliability
Robustness against parasitic turn
Unipolar driving
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