Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S101XTMA1

RS-stocknr.:: 351-970
Fabrikantnummer:: IGC033S101XTMA1
Fabrikant:: Infineon

Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S101XTMA1

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RS-stocknr.:: 351-970
Fabrikantnummer:: IGC033S101XTMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	76A
	Maximum Drain Source Voltage Vds	100V
	Series	IGC033
	Package Type	PG-VSON-6
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	45W
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 76A
	Maximum Drain Source Voltage Vds 100V
	Series IGC033
	Package Type PG-VSON-6
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 45W
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC
	Automotive Standard No

Datasheet - IGC033S101XTMA1

Land van herkomst:: MY

Infineon IGC033 Series MOSFET, 100V Drain Source Voltage, 76A Continuous Drain Current - IGC033S101XTMA1

This MOSFET is a P‑channel enhancement device intended for power switching in surface‑mounted designs. It operates across a wide thermal span and is JEDEC‑compliant, making it suitable for high‑current applications where compact package integration is required.

Features and Benefits:

• Very low Rds(on) of 3.3mΩ for reduced conduction losses
• Can handle continuous drain current of 76A for heavy loads
• 100V drain‑source rating for high voltage switching
• 45W maximum power dissipation for thermal headroom
• Typical gate charge 11nC enabling efficient gate drive
• Surface mount PG‑VSON‑6 package for space‑efficient layouts

Applications

• Suitable for synchronous rectification in power supplies
• Ideal for high‑current DC-DC conversion stages
• Used with motor controllers requiring compact switches
• Can be used for server and telecoms power distribution
• Compatible with battery management systems in industrial equipment

What gate drive considerations should I allow for in designs?

The device exhibits a typical gate charge of 11nC, so gate drivers must supply sufficient peak current to achieve the required switching speed while controlling dV/dt to limit EMI.

How does thermal performance affect PCB layout?

With a 45W power dissipation ceiling, thermal vias and a copper heat spread are recommended to manage junction temperature, especially at high continuous currents.

What voltage and polarity constraints apply to the gate?

The maximum gate‑to‑source rating is 5.5V, so gate drive must not exceed this differential to avoid device stress.

Are there environment limits for deployment?

The device is rated to operate from -40°C up to 150°C, so component selection and thermal design should accommodate that range for reliable operation.