Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1
- RS-stocknr.:
- 351-942
- Fabrikantnummer:
- IPDQ60T010S7XTMA1
- Fabrikant:
- Infineon
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€ 28,80
(excl. BTW)
€ 34,85
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 28,80 |
| 10 - 99 | € 25,93 |
| 100 + | € 23,90 |
*prijsindicatie
- RS-stocknr.:
- 351-942
- Fabrikantnummer:
- IPDQ60T010S7XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPDQ60 | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 0.022Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 694W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Length | 15.1mm | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPDQ60 | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 0.022Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 694W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Length 15.1mm | ||
Height 2.35mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolMOS S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS.
Minimized conduction losses
Increased system performances
Allow more compact design over EMR
Lower TCO over prolonged time
Enabling higher power density designs
Reduction of external sensing elements
Best utilization of power transistor
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