Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

RS-stocknr.:: 349-334
Fabrikantnummer:: IMZA65R015M2HXKSA1
Fabrikant:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

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RS-stocknr.:: 349-334
Fabrikantnummer:: IMZA65R015M2HXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	103A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolSiC
	Package Type	PG-TO247-4
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	18mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	79nC
	Maximum Power Dissipation Pd	341W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 103A
	Maximum Drain Source Voltage Vds 650V
	Series CoolSiC
	Package Type PG-TO247-4
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 18mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 79nC
	Maximum Power Dissipation Pd 341W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMZA65R015M2HXKSA1

Infineon CoolSiC Series MOSFET, 650V Drain Source Voltage, 103A Continuous Drain Current - IMZA65R015M2HXKSA1

This MOSFET is a silicon carbide power transistor designed for high-voltage switching in demanding industrial environments. It operates as an N-channel enhancement device and is supplied in a four-pin PG-TO247-4 through-hole package suited to heat-sinking and conventional assembly methods. The component supports continuous high-current operation and is specified for wide-temperature use, making it appropriate for systems requiring sustained power handling at elevated junction temperatures.

Features and Benefits:

• 650V drain voltage enables high-voltage switching applications
• 103A continuous drain current supports heavy current loads
• 18 mΩ RDS(on) reduces conduction losses for higher efficiency
• 79 nC typical gate charge affords predictable switching behaviour
• 341W maximum power dissipation allows substantial thermal loading
• Rated from -55 °C to 175 °C suits extreme-temperature operation

Applications

• Suitable for industrial motor drive power stages
• Ideal for high-voltage power supplies and inverters
• Used with robust heat-sink assemblies in converters
• Can be used for high-current DC-DC conversion systems
• Appropriate for replacement in through-hole power electronics

What package and mounting method does it use?

It comes in a PG-TO247-4 package with through-hole mounting for soldered or bolted heat-sink attachment.

How does the gate specification affect switching design?

The typical gate charge of 79 nC indicates gate-drive energy and influences chosen driver strength and switching-speed trade-offs.

What thermal limits should designers consider?

The device can dissipate up to 341W under specified conditions and is rated to operate up to 175 °C for high-temperature system designs.

Is it suitable for automotive standard requirements?

It is not specified as meeting automotive standard approvals and should be assessed against automotive qualification needs.