Infineon IPT N-Channel Power Transistor, 137 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1

RS-stocknr.:: 349-130
Fabrikantnummer:: IPT067N20NM6ATMA1
Fabrikant:: Infineon

Infineon IPT N-Channel Power Transistor, 137 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1

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RS-stocknr.:: 349-130
Fabrikantnummer:: IPT067N20NM6ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	Power Transistor
	Channel Type	N
	Maximum Continuous Drain Current Id	137A
	Maximum Drain Source Voltage Vds	200V
	Package Type	PG-HSOF-8
	Series	IPT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.7mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	71nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	300W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	J-STD-020, IEC61249-2-21, 100% Avalanche Tested, RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type Power Transistor
	Channel Type N
	Maximum Continuous Drain Current Id 137A
	Maximum Drain Source Voltage Vds 200V
	Package Type PG-HSOF-8
	Series IPT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.7mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 71nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 300W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals J-STD-020, IEC61249-2-21, 100% Avalanche Tested, RoHS
	Automotive Standard No

Datasheet - IPT067N20NM6ATMA1

Land van herkomst:: MY

Infineon IPT Series Power Transistor, 200V Maximum Drain Source Voltage, 137A Maximum Continuous Drain Current - IPT067N20NM6ATMA1

This power transistor is a high-current N-channel enhancement device intended for demanding switching applications. Designed for surface-mount assembly in a PG-HSOF-8 package, it handles substantial power and operates across an extended temperature range suited to harsh environments. The device meets industry reliability assessments and environmental restrictions to support robust electronic designs.

Features and Benefits:

• 200V rating enables high-voltage switching capability
• 6.7mΩ low Rds(on) reduces conduction losses
• 137A continuous drain current supports heavy loads
• 300W power dissipation manages significant thermal stress
• 71nC typical gate charge delivers predictable switching energy
• 20V gate tolerance permits broad gate-drive choices

Applications

• Suitable for high-power DC-DC converter stages
• Ideal for motor drive and inverter power legs
• Used with synchronous rectification in power supplies
• Can be used for hard-switching topologies in converters
• Appropriate for industrial battery-management systems

What temperature extremes can this device endure in operation?

It operates across a wide range from -55°C up to 175°C, allowing use in environments with high thermal stress.

How is avalanche behaviour assessed for reliability?

Each unit undergoes 100% avalanche testing to verify robustness against transient inductive energy absorption.

Which environmental and packaging standards does it satisfy?

The device complies with J-STD-020 and IEC 61249-2-21 and conforms to RoHS restrictions for material composition.

What mounting and pin configuration should designers expect?

It is supplied in an eight-pin PG-HSOF-8 surface-mount package suitable for automated PCB assembly.