Infineon FS3L40R07W2H5F_B70 Type P-Channel MOSFET Depletion EasyPACK 2B FS3L40R07W2H5FB70BPSA1
- RS-stocknr.:
- 348-982
- Fabrikantnummer:
- FS3L40R07W2H5FB70BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 171,50
(excl. BTW)
€ 207,52
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 09 december 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 171,50 |
*prijsindicatie
- RS-stocknr.:
- 348-982
- Fabrikantnummer:
- FS3L40R07W2H5FB70BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Package Type | EasyPACK 2B | |
| Series | FS3L40R07W2H5F_B70 | |
| Mount Type | Screw | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 2.15V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | 60068, 60749, IEC 60747 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Package Type EasyPACK 2B | ||
Series FS3L40R07W2H5F_B70 | ||
Mount Type Screw | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 2.15V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals 60068, 60749, IEC 60747 | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Infineon EasyPACK 2B 650 V 40 A 3-Level NPC1 Full-Bridge IGBT Module is designed for high efficiency power applications, featuring CoolSiC Schottky Diode Gen 5 and TRENCHSTOP 5 H5 technology. This module offers increased blocking voltage capability of up to 650 V, providing enhanced performance in demanding power systems. The use of CoolSiC Schottky Diode Gen 5 ensures minimal power losses and improved efficiency in high speed switching applications.
Enabling higher frequency
Outstanding module efficiency
System efficiency improvement
System cost advantages
Reduced cooling requirements
Longer life time and/or higher power density
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