Infineon ISA Dual N-Channel Power Transistor, 7.9 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA250250N04LMDSXTMA1
- RS-stocknr.:
- 348-910
- Fabrikantnummer:
- ISA250250N04LMDSXTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 8,64
(excl. BTW)
€ 10,46
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 4.000 stuk(s) vanaf 23 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,432 | € 8,64 |
| 200 - 480 | € 0,411 | € 8,22 |
| 500 - 980 | € 0,38 | € 7,60 |
| 1000 - 1980 | € 0,35 | € 7,00 |
| 2000 + | € 0,337 | € 6,74 |
*prijsindicatie
- RS-stocknr.:
- 348-910
- Fabrikantnummer:
- ISA250250N04LMDSXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-DSO-8 | |
| Series | ISA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-DSO-8 | ||
Series ISA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Infineon OptiMOS 3 Power Transistor is a dual N-channel, logic level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps reduce conduction losses and increase overall system efficiency. Additionally, the transistor offers superior thermal resistance, ensuring better heat management and reliability in demanding conditions. This combination of features makes it ideal for applications requiring efficient power switching and thermal performance.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
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