Infineon OptiMOS 5 Type N-Channel MOSFET, 789 A, 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1
- RS-stocknr.:
- 348-884
- Fabrikantnummer:
- IQDH29NE2LM5SCATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 8,42
(excl. BTW)
€ 10,18
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Nieuw product (vandaag reserveren)
- Verzending vanaf 09 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 4,21 | € 8,42 |
| 20 - 198 | € 3,79 | € 7,58 |
| 200 - 998 | € 3,49 | € 6,98 |
| 1000 - 1998 | € 3,24 | € 6,48 |
| 2000 + | € 2,905 | € 5,81 |
*prijsindicatie
- RS-stocknr.:
- 348-884
- Fabrikantnummer:
- IQDH29NE2LM5SCATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 789A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.29mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 789A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.29mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Land van herkomst:
- AT
The Infineon Power MOSFET comes with industry’s lowest RDS(ON) of 0.29 mOhm combined with outstanding thermal performance for easy power loss management.
Minimized conduction losses
Fast switching
Reduced voltage overshoot
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