Microchip VP3203 Type P-Channel MOSFET, 30 V Enhancement, 3-Pin TO-92 VP3203N3-G
- RS-stocknr.:
- 332-980
- Fabrikantnummer:
- VP3203N3-G
- Fabrikant:
- Microchip
Subtotaal (1 zak van 1000 eenheden)*
€ 2.512,00
(excl. BTW)
€ 3.040,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Nieuw product (vandaag reserveren)
- Verzending vanaf 16 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per Zak* |
|---|---|---|
| 1000 + | € 2,512 | € 2.512,00 |
*prijsindicatie
- RS-stocknr.:
- 332-980
- Fabrikantnummer:
- VP3203N3-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-92 | |
| Series | VP3203 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-92 | ||
Series VP3203 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip MOSFET is a low threshold, enhancement mode transistor utilizes a vertical DMOS structure and well proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source to drain diode
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