STMicroelectronics STL Type N-Channel MOSFET, 373 A, 40 V, 8-Pin PowerFLAT (3.3 x 3.3) STL130N4LF8
- RS-stocknr.:
- 330-473
- Fabrikantnummer:
- STL130N4LF8
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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€ 1,22
(excl. BTW)
€ 1,48
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Verzending 3.000 stuk(s) vanaf 08 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 1,22 |
| 10 - 99 | € 1,10 |
| 100 - 499 | € 1,03 |
| 500 - 999 | € 0,95 |
| 1000 + | € 0,84 |
*prijsindicatie
- RS-stocknr.:
- 330-473
- Fabrikantnummer:
- STL130N4LF8
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 373A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | STL | |
| Package Type | PowerFLAT (3.3 x 3.3) | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 188W | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 373A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series STL | ||
Package Type PowerFLAT (3.3 x 3.3) | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 188W | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
Vrijgesteld
- Land van herkomst:
- CN
The STMicroelectronics 40 V and 100 V power MOSFETs with higher power density, enabling the use of smaller packages for a compact system design without compromising electrical performance. They offer improved noise immunity through enhanced filtering of output voltage overshoots.
Optimized gate charge for faster commutation speeds
Higher immunity to spurious turn-on
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