STMicroelectronics SCT0 MOSFET, 30 A, 1200 V, 3-Pin Hip-247 SCT070W120G3AG
- RS-stocknr.:
- 330-234
- Fabrikantnummer:
- SCT070W120G3AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 13,92
(excl. BTW)
€ 16,84
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Plus verzending 60 stuk(s) vanaf 26 januari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 13,92 |
| 10 - 99 | € 12,53 |
| 100 + | € 11,56 |
*prijsindicatie
- RS-stocknr.:
- 330-234
- Fabrikantnummer:
- SCT070W120G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT0 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Maximum Power Dissipation Pd | 236W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Forward Voltage Vf | 3V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT0 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Maximum Power Dissipation Pd 236W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Forward Voltage Vf 3V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability TJ equal to 200 °C
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