onsemi NCV Type N, Type P-Channel MOSFET, 65 V Dual, 8-Pin SOIC-8 NCV8406DD1CR2G
- RS-stocknr.:
- 327-795
- Fabrikantnummer:
- NCV8406DD1CR2G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 7,94
(excl. BTW)
€ 9,61
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 05 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,794 | € 7,94 |
| 100 - 240 | € 0,754 | € 7,54 |
| 250 - 490 | € 0,698 | € 6,98 |
| 500 - 990 | € 0,643 | € 6,43 |
| 1000 + | € 0,619 | € 6,19 |
*prijsindicatie
- RS-stocknr.:
- 327-795
- Fabrikantnummer:
- NCV8406DD1CR2G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 65V | |
| Package Type | SOIC-8 | |
| Series | NCV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Dual | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 14 V | |
| Maximum Power Dissipation Pd | 1.2W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Length | 5mm | |
| Height | 1.75mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 65V | ||
Package Type SOIC-8 | ||
Series NCV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Dual | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 14 V | ||
Maximum Power Dissipation Pd 1.2W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Length 5mm | ||
Height 1.75mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- PH
The ON Semiconductor Dual protected Low-Side Smart Discrete device offers comprehensive protection features, including overcurrent, over temperature, ESD, and integrated Drain-to-Gate clamping for overvoltage protection. It is designed for reliable performance in harsh automotive environments.
Short Circuit Protection
Thermal Shutdown with Automatic Restart
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