Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -19.6 A, 60 V Enhancement, 8-Pin PG-TDSON-8 ISC800P06LMATMA1
- RS-stocknr.:
- 285-057
- Fabrikantnummer:
- ISC800P06LMATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 6.605,00
(excl. BTW)
€ 7.990,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 1,321 | € 6.605,00 |
*prijsindicatie
- RS-stocknr.:
- 285-057
- Fabrikantnummer:
- ISC800P06LMATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -19.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TDSON-8 | |
| Series | OptiMOS Power Transistor | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -19.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TDSON-8 | ||
Series OptiMOS Power Transistor | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS power transistor redefines efficiency with its superior P channel technology designed for high performance applications. Boasting a breakdown voltage of 60V, it is engineered for robust industrial use, ensuring reliable performance under varying operational conditions. The unique SuperSO8 package facilitates an optimal thermal path for heat dissipation, enhancing the reliability and lifespan of the device. This transistor undergoes rigorous testing, including 100% avalanche testing, ensuring that it meets the highest standards of reliability and quality. With an industry leading low on resistance, it significantly reduces power losses, making it an excellent choice for energy conscious designs.
Very low on resistance improves efficiency
100% avalanche tested for reliability
Pb free lead plating for compliance
Halogen free construction supports eco friendliness
Logic level operation for easy interfacing
Suitable for diverse industrial applications
Excellent thermal characteristics ensure reliability
Enhancement mode design for stable performance
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