Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 10.3 A, 100 V, 8-Pin PG-TSDSON-8 FL ISZ24DP10LMATMA1

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RS-stocknr.:
284-795
Fabrikantnummer:
ISZ24DP10LMATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

P

Maximum Continuous Drain Current

10.3 A

Maximum Drain Source Voltage

100 V

Package Type

PG-TSDSON-8 FL

Series

OptiMOS Power Transistor

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is an OptiMOS Power Transistor is engineered for high performance applications requiring robust reliability and efficiency. With its P channel configuration and an impressive breakdown voltage of 100 V, this device promises to operate optimally under a range of conditions. Its unique enhancement mode design ensures minimal on resistance, while the device is fully compliant with RoHS standards and halogen free, making it an environmentally responsible choice. The power transistor offers remarkable thermal performance, inspired by advanced coupling technologies, ensuring high efficiency for industrial applications. It's fully qualified according to JEDEC guidelines, providing confidence in long term operational stability.

Exceptional performance in high speed switching
Logic level gate drive for easy interfacing
Enhanced thermal resistance for reliability
Meets stringent industrial application requirements
Compact size for efficient PCB space use
Fully qualified per industry standards

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