Infineon OptiMOS Type N-Channel MOSFET, 331 A, 120 V Enhancement, 8-Pin PG-HSOF-8 IPT017N12NM6ATMA1
- RS-stocknr.:
- 284-688
- Fabrikantnummer:
- IPT017N12NM6ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2000 eenheden)*
€ 7.512,00
(excl. BTW)
€ 9.090,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 3,756 | € 7.512,00 |
*prijsindicatie
- RS-stocknr.:
- 284-688
- Fabrikantnummer:
- IPT017N12NM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 331A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 395W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 331A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 395W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 6 power transistor sets a new Benchmark for performance in the semiconductor industry. Engineered for high efficiency and exceptional thermal management, this product excels in demanding applications. With a robust design that supports 120V, it is tailored for high frequency switching, offering reliability and speed without compromising on energy efficiency. The N channel MOSFET integrates very low on resistance and minimal gate charge, making it an Ideal solution for power conversion and control in industrial settings. Its Advanced engineering ensures compliance with RoHS and other environmental standards, making it both a sustainable and performance driven choice for modern electronics.
Optimised for high frequency performance
Excellent thermal efficiency for reliability
Low on resistance reduces energy losses
Fast gate charge for swift operations
Qualified for industrial performance
Environmentally compliant for sustainability
Handles high avalanche energy safely
Wide operating temperature range
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