onsemi NTH Type N-Channel MOSFET, 140 A, 750 V Enhancement, 7-Pin TO-247-4L NTH4L018N075SC1
- RS-stocknr.:
- 277-041
- Fabrikantnummer:
- NTH4L018N075SC1
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 21,48
(excl. BTW)
€ 25,99
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 21,48 |
| 10 - 99 | € 19,33 |
| 100 + | € 17,83 |
*prijsindicatie
- RS-stocknr.:
- 277-041
- Fabrikantnummer:
- NTH4L018N075SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | TO-247-4L | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.5V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 262nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type TO-247-4L | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.5V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 262nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The ON Semiconductor SiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
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