ROHM RV7 Type N-Channel MOSFET, 60 V Enhancement, 3-Pin DFN1212-3 RV7L020GNTCR1
- RS-stocknr.:
- 265-382
- Fabrikantnummer:
- RV7L020GNTCR1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 25 eenheden)*
€ 6,10
(excl. BTW)
€ 7,375
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 100 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 25 - 75 | € 0,244 | € 6,10 |
| 100 - 225 | € 0,232 | € 5,80 |
| 250 - 475 | € 0,215 | € 5,38 |
| 500 - 975 | € 0,198 | € 4,95 |
| 1000 + | € 0,19 | € 4,75 |
*prijsindicatie
- RS-stocknr.:
- 265-382
- Fabrikantnummer:
- RV7L020GNTCR1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RV7 | |
| Package Type | DFN1212-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 157mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.1W | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.5mm | |
| Width | 1.2 mm | |
| Length | 1.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RV7 | ||
Package Type DFN1212-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 157mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.1W | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.5mm | ||
Width 1.2 mm | ||
Length 1.2mm | ||
Automotive Standard No | ||
The ROHM MOSFET is designed for switching and load switching applications. Housed in a leadless ultra small SMD plastic package of 1.2x1.2x0.5 mm with an exposed drain pad, it offers excellent thermal conduction, ensuring efficient performance in compact electronic designs.
RoHS compliant
Low on resistance
Pb free lead plating
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