ROHM RQ3 N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BKFRATCB
- RS-stocknr.:
- 265-253
- Fabrikantnummer:
- RQ3L120BKFRATCB
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 10 eenheden)*
€ 5,98
(excl. BTW)
€ 7,24
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,598 | € 5,98 |
| 100 - 240 | € 0,569 | € 5,69 |
| 250 - 490 | € 0,527 | € 5,27 |
| 500 - 990 | € 0,485 | € 4,85 |
| 1000 + | € 0,467 | € 4,67 |
*prijsindicatie
- RS-stocknr.:
- 265-253
- Fabrikantnummer:
- RQ3L120BKFRATCB
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSMT-8 | |
| Series | RQ3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 40W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 7.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSMT-8 | ||
Series RQ3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 40W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 7.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM Automotive grade MOSFET is an ideal solution for Advanced Driver Assistance Systems, infotainment, lighting and body applications. Its robust construction ensures reliable operation in demanding automotive environments. Realization of high mounting reliability by original terminal and plating treatment.
RoHS compliant
AEC Q101 Qualified
Small high powered package
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