ROHM HP8J 2 Type P-Channel MOSFET, 12.5 A, 100 V Enhancement, 8-Pin HSOP-8 HP8JE5TB1
- RS-stocknr.:
- 264-654
- Fabrikantnummer:
- HP8JE5TB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 5,96
(excl. BTW)
€ 7,21
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 95 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 1,192 | € 5,96 |
| 50 - 95 | € 1,132 | € 5,66 |
| 100 - 495 | € 1,048 | € 5,24 |
| 500 - 995 | € 0,964 | € 4,82 |
| 1000 + | € 0,928 | € 4,64 |
*prijsindicatie
- RS-stocknr.:
- 264-654
- Fabrikantnummer:
- HP8JE5TB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HP8J | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 127mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 21W | |
| Typical Gate Charge Qg @ Vgs | 38.0nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HP8J | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 127mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 21W | ||
Typical Gate Charge Qg @ Vgs 38.0nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM Semiconductor is a dual P-channel MOSFET designed for efficient switching and motor drive applications. It features a low on-resistance and high power dissipation, making it ideal for high-performance circuits. The device is housed in an 8-HSOP package, ensuring compact and reliable surface mounting.
RoHS compliant
High power Package
Pb free plating
Halogen Free
Rg and UIS tested
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