ROHM UT6 2 Type N-Channel MOSFET, 100 V Enhancement, 8-Pin HUML2020L8 UT6KE5TCR
- RS-stocknr.:
- 264-564
- Fabrikantnummer:
- UT6KE5TCR
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 25 eenheden)*
€ 7,375
(excl. BTW)
€ 8,925
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 3.025 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 25 - 75 | € 0,295 | € 7,38 |
| 100 - 225 | € 0,28 | € 7,00 |
| 250 - 475 | € 0,259 | € 6,48 |
| 500 - 975 | € 0,238 | € 5,95 |
| 1000 + | € 0,23 | € 5,75 |
*prijsindicatie
- RS-stocknr.:
- 264-564
- Fabrikantnummer:
- UT6KE5TCR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HUML2020L8 | |
| Series | UT6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 207mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HUML2020L8 | ||
Series UT6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 207mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM 100V 2.0A dual N-channel power MOSFET in a DFN2020-8D package features low on-resistance, making it ideal for switching applications and DC/DC converters. It integrates two 100V MOSFETs in a compact surface-mount design.
Low on-resistance
Small Surface Mount Package
Pb-free plating and RoHS compliant
Halogen Free
Gerelateerde Links
- ROHM UT6 2 Type P, Type N-Channel MOSFET, 100 V Enhancement, 8-Pin HUML2020L8 UT6ME5TCR
- ROHM Pch+Pch UT6 2 Type P-Channel MOSFET, 1 A, 100 V Enhancement, 8-Pin HUML2020L8 UT6JE5TCR
- ROHM RF4P060BG Type N-Channel MOSFET, 6 A, 100 V Enhancement, 8-Pin HUML2020L8
- ROHM RF4P060BG Type N-Channel MOSFET, 6 A, 100 V Enhancement, 8-Pin HUML2020L8 RF4P060BGTCR
- ROHM N-Channel MOSFET, 7 A, 60 V HUML2020L8 RF4L070BGTCR
- ROHM N/P-Channel MOSFET, 4 A, 30 V HUML2020L8 UT6MA2TCR
- ROHM RF4G100BG Type N-Channel MOSFET, 10.3 A, 40 V N, 8-Pin HUML2020L8
- ROHM RF4L Type N-Channel MOSFET, 10.3 A, 60 V N, 8-Pin HUML2020L8 RF4L070BGTCR