ROHM RQ1 Type P-Channel MOSFET, 5 A, 30 V Enhancement, 8-Pin TSMT-8 RQ1E050RPHZGTR
- RS-stocknr.:
- 264-430
- Fabrikantnummer:
- RQ1E050RPHZGTR
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 25 eenheden)*
€ 9,60
(excl. BTW)
€ 11,625
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 25 - 75 | € 0,384 | € 9,60 |
| 100 - 225 | € 0,364 | € 9,10 |
| 250 - 475 | € 0,338 | € 8,45 |
| 500 - 975 | € 0,311 | € 7,78 |
| 1000 + | € 0,299 | € 7,48 |
*prijsindicatie
- RS-stocknr.:
- 264-430
- Fabrikantnummer:
- RQ1E050RPHZGTR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSMT-8 | |
| Series | RQ1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSMT-8 | ||
Series RQ1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The ROHM Small Signal MOSFET for switching applications and it is a high-reliability product of automotive grade qualified to AEC-Q101.
Low on-resistance
Built-in G-S protection diode
Small surface mount package TSMT8
Pb-free lead plating and RoHS compliant
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