onsemi NTMFS N-Channel MOSFET, 111 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS2D3N04XMT1G
- RS-stocknr.:
- 220-602
- Fabrikantnummer:
- NTMFS2D3N04XMT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 10 eenheden)*
€ 4,87
(excl. BTW)
€ 5,89
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 oktober 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,487 | € 4,87 |
| 100 - 240 | € 0,464 | € 4,64 |
| 250 - 490 | € 0,43 | € 4,30 |
| 500 - 990 | € 0,395 | € 3,95 |
| 1000 + | € 0,382 | € 3,82 |
*prijsindicatie
- RS-stocknr.:
- 220-602
- Fabrikantnummer:
- NTMFS2D3N04XMT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 111A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN-5 | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 53W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22.1nC | |
| Forward Voltage Vf | 820mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 6mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 111A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN-5 | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.35mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 53W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22.1nC | ||
Forward Voltage Vf 820mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 6mm | ||
Length 5mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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