onsemi NTMFS Type N-Channel MOSFET, 233 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS1D1N04XMT1G
- RS-stocknr.:
- 220-597
- Fabrikantnummer:
- NTMFS1D1N04XMT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 13,60
(excl. BTW)
€ 16,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 1,36 | € 13,60 |
| 100 - 240 | € 1,29 | € 12,90 |
| 250 - 490 | € 1,198 | € 11,98 |
| 500 - 990 | € 1,10 | € 11,00 |
| 1000 + | € 1,06 | € 10,60 |
*prijsindicatie
- RS-stocknr.:
- 220-597
- Fabrikantnummer:
- NTMFS1D1N04XMT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 233A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 49.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Width | 5.15 mm | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 233A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 49.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Width 5.15 mm | ||
Length 6.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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