onsemi NTMFS N-Channel MOSFET, 414 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS0D5N04XMT1G
- RS-stocknr.:
- 220-589
- Fabrikantnummer:
- NTMFS0D5N04XMT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (5 eenheden, op een band van 5)*
€ 17,02
(excl. BTW)
€ 20,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending 1.500 stuk(s) vanaf 25 augustus 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 3,404 | € 17,02 |
| 50 - 95 | € 3,236 | € 16,18 |
| 100 - 495 | € 2,988 | € 14,94 |
| 500 - 995 | € 2,756 | € 13,78 |
| 1000 + | € 2,654 | € 13,27 |
*prijsindicatie
- RS-stocknr.:
- 220-589
- Fabrikantnummer:
- NTMFS0D5N04XMT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 414A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN-5 | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.52mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 163W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 97.5nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Width | 6mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 414A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN-5 | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.52mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 163W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 97.5nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Width 6mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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