onsemi NTD Type N-Channel MOSFET & Diode, 13 A, 600 V Enhancement, 3-Pin TO-252 NTD280N60S5Z
- RS-stocknr.:
- 220-565
- Fabrikantnummer:
- NTD280N60S5Z
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 14,58
(excl. BTW)
€ 17,64
(incl. BTW)
Voeg 30 eenheden toe voor gratis bezorging
Op voorraad
- 2.475 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 2,916 | € 14,58 |
| 50 - 95 | € 2,77 | € 13,85 |
| 100 - 495 | € 2,568 | € 12,84 |
| 500 - 995 | € 2,366 | € 11,83 |
| 1000 + | € 2,276 | € 11,38 |
*prijsindicatie
- RS-stocknr.:
- 220-565
- Fabrikantnummer:
- NTD280N60S5Z
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | NTD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 224mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.9nC | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-Free, 100% Avalanche Tested | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series NTD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 224mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.9nC | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-Free, 100% Avalanche Tested | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The ON Semiconductor MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use and EMI issues for both hard and soft switching topologies.
Halogen Free
RoHS Compliant
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