onsemi NTMFS3 N-Channel MOSFET, 83 A, 40 V Enhancement, 5-Pin DFN-5
- RS-stocknr.:
- 220-549P
- Fabrikantnummer:
- NTMFS3D1N04XMT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 100 eenheden (geleverd op een doorlopende strip)*
€ 80,80
(excl. BTW)
€ 97,80
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending 1.500 stuk(s) vanaf 18 augustus 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 100 - 240 | € 0,808 |
| 250 - 490 | € 0,746 |
| 500 - 990 | € 0,69 |
| 1000 + | € 0,662 |
*prijsindicatie
- RS-stocknr.:
- 220-549P
- Fabrikantnummer:
- NTMFS3D1N04XMT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS3 | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 15.6nC | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15mm | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS3 | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 15.6nC | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 5.15mm | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Height 1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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