onsemi NTMFS3 Type N-Channel MOSFET, 83 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS3D1N04XMT1G
- RS-stocknr.:
- 220-549
- Fabrikantnummer:
- NTMFS3D1N04XMT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 7,43
(excl. BTW)
€ 8,99
(incl. BTW)
Voeg 110 eenheden toe voor gratis bezorging
Op voorraad
- 1.500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,743 | € 7,43 |
| 100 - 240 | € 0,707 | € 7,07 |
| 250 - 490 | € 0,654 | € 6,54 |
| 500 - 990 | € 0,604 | € 6,04 |
| 1000 + | € 0,581 | € 5,81 |
*prijsindicatie
- RS-stocknr.:
- 220-549
- Fabrikantnummer:
- NTMFS3D1N04XMT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS3 | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 39W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 15.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15 mm | |
| Height | 1mm | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS3 | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 39W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 15.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.15 mm | ||
Height 1mm | ||
Length 6.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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