Nexperia PSM Type N-Channel MOSFET, 200 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R9-40YSBX

Subtotaal (1 rol van 1500 eenheden)*

€ 1.942,50

(excl. BTW)

€ 2.350,50

(incl. BTW)

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  • Plus verzending 1.500 stuk(s) vanaf 23 februari 2026
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1500 +€ 1,295€ 1.942,50

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RS-stocknr.:
219-499
Fabrikantnummer:
PSMN1R9-40YSBX
Fabrikant:
Nexperia
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Merk

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

194W

Typical Gate Charge Qg @ Vgs

56nC

Maximum Gate Source Voltage Vgs

10 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. It is optimized to improve EMC performance by up to 6 dB. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, battery isolation, industrial load-switching, eFuse, and inrush management.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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