Nexperia PSMN0R7 Type N-Channel MOSFET, 300 A, 25 V Enhancement, 5-Pin LFPAK PSMN0R7-25YLDX
- RS-stocknr.:
- 219-351
- Fabrikantnummer:
- PSMN0R7-25YLDX
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 rol van 1 eenheid)*
€ 2,80
(excl. BTW)
€ 3,39
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Plus verzending 1.494 stuk(s) vanaf 30 december 2025
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Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 2,80 |
| 10 - 99 | € 2,52 |
| 100 - 499 | € 2,32 |
| 500 - 999 | € 2,15 |
| 1000 + | € 1,93 |
*prijsindicatie
- RS-stocknr.:
- 219-351
- Fabrikantnummer:
- PSMN0R7-25YLDX
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | LFPAK | |
| Series | PSMN0R7 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.92mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.3mm | |
| Height | 1.1mm | |
| Width | 4.7 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type LFPAK | ||
Series PSMN0R7 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.92mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.3mm | ||
Height 1.1mm | ||
Width 4.7 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
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