Nexperia NextPowerS3 Type N-Channel MOSFET, 300 A, 30 V Enhancement, 5-Pin LFPAK PSMN0R9-30YLDX
- RS-stocknr.:
- 219-275
- Fabrikantnummer:
- PSMN0R9-30YLDX
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 rol van 1 eenheid)*
€ 2,16
(excl. BTW)
€ 2,61
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 2,16 |
| 10 - 99 | € 1,96 |
| 100 - 499 | € 1,79 |
| 500 - 999 | € 1,67 |
| 1000 + | € 1,50 |
*prijsindicatie
- RS-stocknr.:
- 219-275
- Fabrikantnummer:
- PSMN0R9-30YLDX
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NextPowerS3 | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.87mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 291W | |
| Typical Gate Charge Qg @ Vgs | 109nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NextPowerS3 | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.87mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 291W | ||
Typical Gate Charge Qg @ Vgs 109nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
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