STMicroelectronics SCT Type N-Channel MOSFET, 100 A, 1200 V Enhancement, 4-Pin
- RS-stocknr.:
- 215-070
- Fabrikantnummer:
- SCT020W120G3-4AG
- Fabrikant:
- STMicroelectronics
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€ 63,11
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€ 76,36
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- Plus verzending 30 stuk(s) vanaf 23 februari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 63,11 |
| 10 + | € 56,80 |
*prijsindicatie
- RS-stocknr.:
- 215-070
- Fabrikantnummer:
- SCT020W120G3-4AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 18.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 541W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 18.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 541W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
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