STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N
- RS-stocknr.:
- 151-952
- Fabrikantnummer:
- STD13NM60N
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 5 eenheden)*
€ 16,44
(excl. BTW)
€ 19,89
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Laatste voorraad RS
- Laatste 2.250 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 3,288 | € 16,44 |
| 50 - 95 | € 3,122 | € 15,61 |
| 100 - 495 | € 2,89 | € 14,45 |
| 500 - 995 | € 2,662 | € 13,31 |
| 1000 + | € 2,57 | € 12,85 |
*prijsindicatie
- RS-stocknr.:
- 151-952
- Fabrikantnummer:
- STD13NM60N
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | MDmesh II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.36Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Standards/Approvals | RoHS | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series MDmesh II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.36Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Standards/Approvals RoHS | ||
Length 10.1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
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