STMicroelectronics SuperMESH Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-220 STP6NK60Z
- RS-stocknr.:
- 151-941
- Fabrikantnummer:
- STP6NK60Z
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 40,75
(excl. BTW)
€ 49,30
(incl. BTW)
Voeg 100 eenheden toe voor gratis bezorging
Tijdelijk niet op voorraad
- Verzending 50 stuk(s) vanaf 18 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 450 | € 0,815 | € 40,75 |
| 500 - 950 | € 0,774 | € 38,70 |
| 1000 + | € 0,717 | € 35,85 |
*prijsindicatie
- RS-stocknr.:
- 151-941
- Fabrikantnummer:
- STP6NK60Z
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 28.9mm | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS | |
| Length | 28.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 28.9mm | ||
Width 10.4 mm | ||
Standards/Approvals RoHS | ||
Length 28.9mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET is obtained through an extreme optimization of well established strip based Power MESH layout. In addition to pushing on resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
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