STMicroelectronics STripFET II Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25NF10T4
- RS-stocknr.:
- 151-917
- Fabrikantnummer:
- STD25NF10T4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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(excl. BTW)
€ 5,98
(incl. BTW)
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,494 | € 4,94 |
| 100 - 240 | € 0,469 | € 4,69 |
| 250 - 490 | € 0,436 | € 4,36 |
| 500 - 990 | € 0,40 | € 4,00 |
| 1000 + | € 0,386 | € 3,86 |
*prijsindicatie
- RS-stocknr.:
- 151-917
- Fabrikantnummer:
- STD25NF10T4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STripFET II | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STripFET II | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters for telecom and computer applications.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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