STMicroelectronics STN Type N-Channel MOSFET, 1 A, 200 V Enhancement, 4-Pin SOT-223 STN4NF20L
- RS-stocknr.:
- 151-425
- Fabrikantnummer:
- STN4NF20L
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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€ 10,08
(excl. BTW)
€ 12,20
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 20 - 180 | € 0,504 | € 10,08 |
| 200 - 480 | € 0,48 | € 9,60 |
| 500 - 980 | € 0,442 | € 8,84 |
| 1000 - 1980 | € 0,408 | € 8,16 |
| 2000 + | € 0,393 | € 7,86 |
*prijsindicatie
- RS-stocknr.:
- 151-425
- Fabrikantnummer:
- STN4NF20L
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | STN | |
| Package Type | SOT-223 | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Power Dissipation Pd | 3.3W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series STN | ||
Package Type SOT-223 | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Power Dissipation Pd 3.3W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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