onsemi MMBFJ270 P-Channel JFET, 15 V, Idss -2 to -15mA, 3-Pin SOT-23
- RS-stocknr.:
- 166-2224
- Fabrikantnummer:
- MMBFJ270
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 453,00
(excl. BTW)
€ 549,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 6000 | € 0,151 | € 453,00 |
| 9000 + | € 0,149 | € 447,00 |
*prijsindicatie
- RS-stocknr.:
- 166-2224
- Fabrikantnummer:
- MMBFJ270
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | P | |
| Idss Drain-Source Cut-off Current | -2 to -15mA | |
| Maximum Drain Source Voltage | 15 V | |
| Maximum Gate Source Voltage | +30 V | |
| Maximum Drain Gate Voltage | -30V | |
| Transistor Configuration | Single | |
| Configuration | Single | |
| Mounting Type | Surface Mount | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Dimensions | 2.9 x 1.3 x 1.04mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Width | 1.3mm | |
| Height | 1.04mm | |
| Length | 2.9mm | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type P | ||
Idss Drain-Source Cut-off Current -2 to -15mA | ||
Maximum Drain Source Voltage 15 V | ||
Maximum Gate Source Voltage +30 V | ||
Maximum Drain Gate Voltage -30V | ||
Transistor Configuration Single | ||
Configuration Single | ||
Mounting Type Surface Mount | ||
Package Type SOT-23 | ||
Pin Count 3 | ||
Dimensions 2.9 x 1.3 x 1.04mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Width 1.3mm | ||
Height 1.04mm | ||
Length 2.9mm | ||
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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