STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 877-2905
- Fabrikantnummer:
- STGW30NC60KD
- Fabrikant:
- STMicroelectronics
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 28/11/2024, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk (in een verpakking 5)
€ 6,346
(excl. BTW)
€ 7,679
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 5 - 5 | € 6,346 | € 31,73 |
| 10 - 95 | € 5,394 | € 26,97 |
| 100 - 495 | € 4,316 | € 21,58 |
| 500 - 995 | € 3,838 | € 19,19 |
| 1000 + | € 3,244 | € 16,22 |
| *prijsindicatie | ||
- RS-stocknr.:
- 877-2905
- Fabrikantnummer:
- STGW30NC60KD
- Fabrikant:
- STMicroelectronics
Wetgeving en conformiteit
- Land van herkomst:
- CN
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 200 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 24.45mm |
| Minimum Operating Temperature | -55 °C |
| Energy Rating | 1435mJ |
| Maximum Operating Temperature | +150 °C |
| Gate Capacitance | 2170pF |
- RS-stocknr.:
- 877-2905
- Fabrikantnummer:
- STGW30NC60KD
- Fabrikant:
- STMicroelectronics