onsemi FGD3440G2-F085 IGBT, 26.9 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

Niet beschikbaar
RS heeft dit product niet meer op voorraad.
Verpakkingsopties

Alternatief

Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.

L'unité (en paquet de 5)

1,546 €

(excl. BTW)

1,871 €

(incl. BTW)

RS-stocknr.:
807-0776
Fabrikantnummer:
FGD3440G2-F085
Fabrikant:
ON Semiconductor
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

ON Semiconductor

Maximum Continuous Collector Current

26.9 A

Maximum Collector Emitter Voltage

300 V

Maximum Gate Emitter Voltage

±10V

Maximum Power Dissipation

166 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q100

Automotive Ignition IGBT, Fairchild Semiconductor


These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.

Features


• Logic-level gate drive
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications

RS Product Codes


864-8802 FGB3040CS 400V 20A D2PAK

864-8805 FGB3040G2_F085 400V 25A DPAK-2

807-0767 FGD3040G2_F085 400V 25A DPAK

864-8880 FGI3040G2_F085 400V 25A I2PAK

864-8899 FGP3040G2_F085 400V 25A TO220

864-8809 FGB3245G2_F085 450V 23A D2PAK-2

864-8827 FGD3245G2_F085 450V 23A DPAK

807-0776 FGD3440G2_F085 400V 25A DPAK

864-8818 FGB3440G2_F085 400V 25A D2PAK-2

864-8893 FGP3440G2_F085 400V 25A TO220

807-8751 ISL9V5036P3_F085 360V 31A TO220

862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK

Note

Quoted current ratings apply when junction temperature Tc = +110°C.

Standards

AEC-Q101


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Gerelateerde Links