IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

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RS-stocknr.:
804-7616
Fabrikantnummer:
IXDN55N120D1
Fabrikant:
IXYS
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IXYS

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

450 W

Package Type

SOT-227B

Mounting Type

Surface Mount

Channel Type

N

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

38.2 x 25.07 x 9.6mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

IGBT Discretes, IXYS



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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