IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount
- RS-stocknr.:
- 168-4763
- Fabrikantnummer:
- IXA70I1200NA
- Fabrikant:
- IXYS
Subtotaal (1 tube van 10 eenheden)*
€ 392,36
(excl. BTW)
€ 474,76
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 10 stuk(s) vanaf 06 februari 2026
- Plus verzending 20 stuk(s) vanaf 13 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 10 + | € 39,236 | € 392,36 |
*prijsindicatie
- RS-stocknr.:
- 168-4763
- Fabrikantnummer:
- IXA70I1200NA
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 350 W | |
| Package Type | SOT-227B | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 4 | |
| Transistor Configuration | Single | |
| Dimensions | 38.23 x 25.25 x 9.6mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +125 °C | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 350 W | ||
Package Type SOT-227B | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 4 | ||
Transistor Configuration Single | ||
Dimensions 38.23 x 25.25 x 9.6mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +125 °C | ||
- Land van herkomst:
- US
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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