Fuji Electric FGW40N120VD IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 772-9051P
- Fabrikantnummer:
- FGW40N120VD
- Fabrikant:
- Fuji Electric
Bulkkorting beschikbaar
Subtotaal 5 eenheden (geleverd in een buis)*
€ 48,70
(excl. BTW)
€ 58,95
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk |
|---|---|
| 5 - 14 | € 9,74 |
| 15 - 29 | € 9,23 |
| 30 - 59 | € 8,71 |
| 60 + | € 8,21 |
*prijsindicatie
- RS-stocknr.:
- 772-9051P
- Fabrikantnummer:
- FGW40N120VD
- Fabrikant:
- Fuji Electric
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Fuji Electric | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 340 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.9 x 5.03 x 20.95mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Fuji Electric | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 340 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.9 x 5.03 x 20.95mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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