Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247
- RS-stocknr.:
- 218-4400
- Fabrikantnummer:
- IKW40N120CS6XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 144,09
(excl. BTW)
€ 174,36
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 240 stuk(s) vanaf 23 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 4,803 | € 144,09 |
| 60 - 120 | € 4,563 | € 136,89 |
| 150 + | € 4,371 | € 131,13 |
*prijsindicatie
- RS-stocknr.:
- 218-4400
- Fabrikantnummer:
- IKW40N120CS6XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 500 W | |
| Package Type | TO-247 | |
| Channel Type | N | |
| Pin Count | 3 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 500 W | ||
Package Type TO-247 | ||
Channel Type N | ||
Pin Count 3 | ||
The Infineon high speed hard-switching TRENCHSTOP IGBT6 co-packed with a soft and fast recovery full current anti-parallel diode in a TO-247 package is designed to reach the best compromise between switching and conduction losses. It is used in industrial heating and welding and UPS system.
Lowest losses on IGBT, high system efficiency for higher power output
Fast and easy replacement of predecessor H3 technology
High device reliability and lifetime expectancy
Fast and easy replacement of predecessor H3 technology
High device reliability and lifetime expectancy
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