onsemi FGH40N60UFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 759-9273
- Fabrikantnummer:
- FGH40N60UFDTU
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 3,79
(excl. BTW)
€ 4,59
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 42 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 350 stuk(s) vanaf 24 december 2025
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 3,79 |
| 10 + | € 3,26 |
*prijsindicatie
- RS-stocknr.:
- 759-9273
- Fabrikantnummer:
- FGH40N60UFDTU
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 290 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.6 x 4.7 x 20.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 290 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.6 x 4.7 x 20.6mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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